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1/15 november 2004 std1nk60 - std1nk60-1 stq1hnk60r - STN1HNK60 n-channel 600v - 8 ? - 1a dpak/to-92/ipak/sot-223 supermesh? mosfet table 1: general features typical r ds (on) = 8 ? extremely high dv/dt capability esd improved capability 100% avalanche tested new high voltage benchmark gate charge minimized description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mos- fets including revolutionary mdmesh? products. applications low power battery chargers swith mode low power supplies(smps) low power, ballast, cfl (compact fluorescent lamps) table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw std1nk60 std1nk60-1 stq1hnk60r STN1HNK60 600 v 600 v 600 v 600 v < 8.5 ? < 8.5 ? < 8.5 ? < 8.5 ? 1 a 1 a 0.4 a 0.4 a 30 w 30 w 3 w 3.3 w 3 2 1 to-92 (ammopack) ipak 1 2 2 3 sot-223 1 3 dpak part number marking package packaging std1nk60t4 d1nk60 dpak tape & reel std1nk60-1 d1nk60 ipak tube stq1hnk60r 1hnk60r to-92 bulk stq1hnk60r-ap 1hnk60r to-92 ammopak STN1HNK60 1hnk60 sot-223 tape & reel rev. 2
std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 2/15 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 1.0a, di/dt 100a/s, v dd v (br)dss , t j t jmax. table 4: thermal data (#) when mounted on fr-4 board of 1 in 2 , 2oz cu, t < 10 sec table 5: avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) table 6: on/off symbol parameter value unit dpak / ipak to-92 sot-223 v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k ? ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 1.0 0.4 0.4 a i d drain current (continuous) at t c = 100 c 0.63 0.25 0.25 a i dm ( ) drain current (pulsed) 4 1.6 1.6 a p tot total dissipation at t c = 25 c 30 3 3.3 w derating factor 0.24 0.025 0.025 w/ c dv/dt (1) peak diode recovery voltage slope 3 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c dpak/ipak to-92 sot-223 unit rthj-case thermal resistance junction-case max 4.16 -- -- c/w rthj-amb thermal resistance junction-ambient max 100 120 37.87 (#) c/w rthj-lead thermal resistance junction-lead max -- 40 -- c/w t l maximum lead temperature for soldering purpose 275 260 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 25 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.25 3 3.7 v r ds(on) static drain-source on resistance v gs = 10v, i d = 0.5 a 8 8.5 ?
3/15 std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 electrical characteristics (continued) table 7: dynamic table 8: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 0.5 a 1 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 156 23.5 3.8 pf pf pf t d(on) t r t d(off) t r turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 0.5 a, r g = 4.7 ?, v gs = 10 v (resistive load see, figure 21) 6.5 5 19 25 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480v, i d = 1 a, v gs = 10v, r g = 4.7 ? (see, figure 23) 7 1.1 3.7 10 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 1 4 a a v sd (1) forward on voltage i sd = 1.0 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.0 a, di/dt = 100 a/s v dd = 25v, t j = 25 c (see test circuit, figure 22) 140 240 3.3 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.0 a, di/dt = 100 a/s v dd = 25v, t j = 150 c (see test circuit, figure 22) 229 377 3.3 ns c a
std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 4/15 figure 3: . safe operating area for sot-223 figure 4: safe operating area for dpak/ipak figure 5: safe operating area for to-92 figure 6: thermal impedance for sot-223 figure 7: thermal impedance for dpak/ipak figure 8: thermal impedance for to-92
5/15 std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 figure 9: output characteristics figure 10: transconductance figure 11: capacitance variations figure 12: transfer characteristics figure 13: gate charge vs gate-source voltage figure 14: static drain-source on resistance
std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 6/15 figure 15: normalized gate thereshold volt- age vs temperature figure 16: source-drain forward characteris- tics figure 17: maximum avalanche energy vs temperature figure 18: normalized on resistance vs tem- perature figure 19: normalized bv dss vs temperature figure 20: max id current vs tc
7/15 std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 figure 21: switching times test circuit for resistive load figure 22: test circuit for inductive load switching and diode recovery times figure 23: gate charge test circuit
std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 8/15 dim. mm. inch min. typ max. min. typ. max. a 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 d 4.45 4.95 0.175 0.194 e 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 l 12.70 15.49 0.50 0.610 r 2.16 2.41 0.085 0.094 s1 0.92 1.52 0.036 0.060 w 0.41 0.56 0.016 0.022 v5 5 to-92 mechanical data
9/15 std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 dim. mm. inch min. typ max. min. typ. max. a1 4.45 4.95 0.170 0.194 t 3.30 3.94 0.130 0.155 t1 1.6 0.06 t2 2.3 0.09 d 0.41 0.56 0.016 0.022 p0 12.5 12.7 12.9 0.49 0.5 0.51 p2 5.65 6.35 7.05 0.22 0.25 0.27 f1, f2 2.44 2.54 2.94 0.09 0.1 0.11 delta h -2 2 -0.08 0.08 w 17.5 18 19 0.69 0.71 0.74 w0 5.7 6 6.3 0.22 0.23 0.24 w1 8.5 9 9.25 0.33 0.35 0.36 w2 0.5 0.02 h 18.5 20.5 0.72 0.80 h0 15.5 16 16.5 0.61 0.63 0.65 h1 25 0.98 d0 3.8 4 4.2 0.15 0.157 0.16 t0.90.035 l110.43 l1 3 0.11 delta p -1 1 -0.04 0.04 to-92 ammopack
std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 10/15 dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data
11/15 std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 12/15 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
13/15 std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 14/15 table 9: revision history date revision description of changes 22-nov-2004 2 added sot-223 package and new stylesheet
15/15 std1nk60 - std1nk60-1 - stq1hnk60r - STN1HNK60 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

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